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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1659
DESCRIPTION *High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) *Complement to Type 2SC4370 *Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS *Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.0
V
IC(DC)
Collector Current(DC)
-1.5
A
IB(DC)
Base Current Collector Power Dissipation @TC=25 Junction Temperature
-0.15
A
PC
20
W
TJ
150
Tstg
Storage Temperature
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1659
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-160
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.5
V A
ICBO
Collector Cutoff Current
VCB= -160V ; IE=0
-1.0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-1.0
A
hFE
DC Current Gain
IC= -100mA ; VCE= -5V
70
240
COB
Output Capacitance
IE=0 ; VCB= -10V;f= 1.0MHz
30
pF
fT
Current-Gain--Bandwidth Product
IC=-100m A ; VCE= -10V
100
MHz
hFE Classifications O 70-140 Y 120-240
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1659
isc Websitewww.iscsemi.cn 3


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